Frédéric Aniel: search on Z-Library

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1

Parasitic electrostatic capacitance of high-speed SiGe Heterojunction Bipolar Transistors

Nicolas Zerounian, Frédéric Aniel, Benoît Barbalat, Pascal Chevalier, Alain Chantre

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 412 KB

english, 2009

2

Energy-band structure of GaAs and Si: A sps* k⋅p method

Cavassilas, Nicolas, Aniel, Frédéric, Boujdaria, Kais, Fishman, Guy

Journal:

Physical Review B

Year:

2001

Language:

english

File:

PDF, 80 KB

english, 2001

3

Design and VNA-measurement of coplanar waveguide (CPW) on benzocyclobutene (BCB) at THz frequencies

Cao, Lei, Grimault-Jacquin, Anne-Sophie, Zerounian, Nicolas, Aniel, Frédéric

Journal:

Infrared Physics & Technology

Year:

2014

Language:

english

File:

PDF, 1.35 MB

english, 2014

4

[IEEE 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - Atlanta, GA, USA (2019.7.7-2019.7.12)] 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - High Gain Constrained Lens Antenna on BCB Substrate for 300-GHz Applications

Mahmoud, Adham, Gonzalez-Ovejero, David, Ettorre, Mauro, Sauleau, Ronan, Aniel, Frederic, Zerounian, Nicolas, Grimault-Jacquin, Anne-Sophie

Year:

2019

Language:

english

File:

PDF, 620 KB

english, 2019

5

Consideration to minimize losses in terahertz coplanar waveguide on indium phosphide

Anne-Sophie Grimault-Jacquin, Bouchra Tissafi, Etienne Perret, Frédéric Aniel

Journal:

Microwave and Optical Technology Letters

Year:

2012

Language:

english

File:

PDF, 739 KB

english, 2012

6

Complex permittivity characterization of benzocyclobutene for terahertz applications

Etienne Perret, Nicolas Zerounian, Sylvain David, Frédéric Aniel

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 836 KB

english, 2008

7

Transit times of SiGe:C HBTs using nonselective base epitaxy

Nicolas Zerounian, Manuel Rodriguez, Mauro Enciso, Frédéric Aniel, Pascal Chevalier, Bertrand Martinet, Alain Chantre

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 432 KB

english, 2004

8

Full-band matrix solution of the Boltzmann transport equation and electron impact ionization in GaAs

Nicolas Cavassilas, Frédéric Aniel, Guy Fishman, Robert Adde

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 267 KB

english, 2002

9

Band diagrams of Si and Ge quantum wells via the 30-band k∙p method

Richard, Soline, Aniel, Frédéric, Fishman, Guy

Journal:

Physical Review B

Year:

2005

Language:

english

File:

PDF, 120 KB

english, 2005

10

Energy-band structure in strained silicon: A 20-band k∙p and Bir–Pikus Hamiltonian model

Richard, Soline, Aniel, Frederic, Fishman, Guy, Cavassilas, Nicolas

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 407 KB

english, 2003

11

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Monte Carlo-Based Analytical Models for Electron and Hole Electrical Parameters in Strained SiGeC Alloys

Michaillat, Marc, Rideau, Denis, Aniel, Frederic, Tavernier, Clement, Jaouen, Herve

Year:

2009

Language:

english

File:

PDF, 474 KB

english, 2009

12

method

Richard, Soline, Aniel, Frédéric, Fishman, Guy

Journal:

Physical Review B

Year:

2004

Language:

english

File:

PDF, 94 KB

english, 2004

13

Tools, Methods and Services Enhancing the Usage of the Kepler-based Scientific Workflow Framework

Płóciennik, Marcin, Winczewski, Szymon, Ciecieląg, Paweł, Imbeaux, Frederic, Guillerminet, Bernard, Huynh, Philippe, Owsiak, Michał, Spyra, Piotr, Aniel, Thierry, Palak, Bartek, Żok, Tomasz, Pych, Woj

Journal:

Procedia Computer Science

Year:

2014

Language:

english

File:

PDF, 1.44 MB

english, 2014

14

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Germanium profile, graduality and base doping level influences in the performance of SiGe HBT

Garcia, Eloy Ramirez, Zerounian, Nicolas, Aniel, Frederic, Enciso Aguilar, Mauro A., Barbalat, Benoit, Chevalier, Pascal, Chantre, Alain

Year:

2007

Language:

english

File:

PDF, 182 KB

english, 2007

15

[IEEE 2007 European Microwave Integrated Circuit Conference - Munich, Germany (2007.10.8-2007.10.10)] 2007 European Microwave Integrated Circuit Conference - Electrostatic capacitances of high-speed SiGe HBT

Zerounian, Nicolas, Ramirez Garcia, Eloy, Aniel, Frederic, Barbalat, Benoit, Chevalier, Pascal, Chantre, Alain

Year:

2007

Language:

english

File:

PDF, 519 KB

english, 2007

16

method [Phys. Rev. B 70 , 235204 (2004)]

Richard, Soline, Aniel, Frédéric, Fishman, Guy

Journal:

Physical Review B

Year:

2005

Language:

english

File:

PDF, 8 KB

english, 2005

17

[IEEE 2006 International Caribbean Conference on Devices, Circuits and Systems - Playa del Carmen, Mexico (2006.4.26-2006.4.26)] 2006 International Caribbean Conference on Devices, Circuits and Systems - HF Noise behavior and Small Signal Modeling of strained Si HFETs

Enciso-Aguilar, Mauro, Rodriguez, Manuel, Hackbarth, Thomas, Zerounian, Nicolas, Aniel, Frederic

Year:

2006

Language:

english

File:

PDF, 6.88 MB

english, 2006

18

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Parasitic Electrostatic Capacitances in Si/SiGe n-HFET

Enciso-Aguilar, Mauro, Zerounian, Nicolas, Hackbarth, Thomas, Herzog, Hans, Aniel, Frederic

Year:

2006

Language:

english

File:

PDF, 278 KB

english, 2006

19

Monte Carlo Modelisation of Photoexcited Carriers Relaxation Including Auger Effect in Narrow Band Gap InGaAs

Tea, Eric, Aniel, Frederic

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 126 KB

english, 2009

20

SPIE Proceedings [SPIE Second International Symposium on Fluctuations and Noise - Maspalomas, Gran Canaria Island, Spain (Tuesday 25 May 2004)] Noise in Devices and Circuits II - Noise in Si/SiGe and Ge/SiGe MODFET

Aniel, Frederic P., Enciso-Aguilar, Mauro, Rodriguez, Manuel, Zerounian, Nicolas, Crozat, Paul, Hackbarth, Thomas, Herzog, Joest-Hans, Danneville, Francois, Bonani, Fabrizio, Deen, M. Jamal, Levinshte

Year:

2004

Language:

english

File:

PDF, 431 KB

english, 2004

21

Minoritary Transport in Heavily Doped p-type InGaAs

Tea, Eric, Aniel, Frederic

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 155 KB

english, 2009

22

Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices

Zeuner, Marco, Hackbarth, Thomas, Enciso-Aguilar, Mauro, Aniel, Frederic, Känel, Hans von

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 372 KB

english, 2003

23

The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors

Barbalat, Benoît, Schwartzmann, Thierry, Chevalier, Pascal, Vandelle, Benoît, Rubaldo, Laurent, Lachater, Anne, Saguin, Fabienne, Zerounian, Nicolas, Aniel, Frédéric, Chantre, Alain

Journal:

Semiconductor Science and Technology

Year:

2007

Language:

english

File:

PDF, 270 KB

english, 2007

24

Metis: a fast integrated tokamak modelling tool for scenario design

Artaud, Jean-Francois, Imbeaux, Frederic, Garcia, Jeronimo, Giruzzi, Gerardo, Aniel, Thierry, Basiuk, Vincent, Becoulet, Alain, Bourdelle, Clarisse, Buravand, Yves, Decker, Joan, Dumont, Remi, Eriksso

Journal:

Year:

2018

Language:

english

File:

PDF, 2.67 MB

english, 2018

25

Characteristics of Coplanar Waveguide of Small Cross Section on BCB with Coplanar Ground to Conductor-Backed Plane Interconnection

Grimault-Jacquin, Anne-Sophie, Zerounian, Nicolas, Kaid Omar, Iméne, Crozat, Paul, Amar, Farah, Villebasse, Cédric, Bouville, David, Hamouda, Frédéric, Aniel, Frédéric

Journal:

Journal of Infrared, Millimeter and Terahertz Waves

Year:

2019

Language:

english

File:

PDF, 1.15 MB

english, 2019

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